Carrier recombination in 1.3μm GaAsSb∕GaAs quantum well lasers

Carrier Lifetime and Recombination in Long-Wavelength Quantum-Well Lasers

We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intr...

Carrier recombination in 1.3 m GaAsSb/GaAs quantum well lasers

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependen...

The influence of growth conditions on carrier recombination mechanisms in 1.3μm GaAsSb/GaAs quantum well lasers

Auger Recombination in Quantum - Well InGaAsP Heterostructure Lasers

Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...

Two-well terahertz quantum cascade lasers with suppressed carrier leakage